Invention Grant
US07790558B2 Method and apparatus for increase strain effect in a transistor channel
有权
在晶体管通道中增加应变效应的方法和装置
- Patent Title: Method and apparatus for increase strain effect in a transistor channel
- Patent Title (中): 在晶体管通道中增加应变效应的方法和装置
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Application No.: US11465663Application Date: 2006-08-18
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Publication No.: US07790558B2Publication Date: 2010-09-07
- Inventor: Haining S. Yang , Huilong Zhu
- Applicant: Haining S. Yang , Huilong Zhu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Ian Mackinnon
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Method of enhancing stress in a semiconductor device having a gate stack disposed on a substrate. The method utilizes depositing a nitride film along a surface of the substrate and the gate stack. The nitride film is thicker over a surface of the substrate and thinner over a portion of the gate stack.
Public/Granted literature
- US20060281272A1 METHOD AND APPARATUS FOR INCREASE STRAIN EFFECT IN A TRANSISTOR CHANNEL Public/Granted day:2006-12-14
Information query
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