Invention Grant
- Patent Title: Ferroelectric memory apparatus and control method of the same
- Patent Title (中): 铁电存储器及其控制方法相同
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Application No.: US11854197Application Date: 2007-09-12
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Publication No.: US07768811B2Publication Date: 2010-08-03
- Inventor: Noriaki Matsuno , Atsuo Inoue
- Applicant: Noriaki Matsuno , Atsuo Inoue
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2006-249940 20060914
- Main IPC: G11C11/22
- IPC: G11C11/22

Abstract:
The ferroelectric memory apparatus stores data, and includes: a ferroelectric memory element; a temperature sensor which detects a temperature of the apparatus; a control unit that outputs a control signal indicating a voltage, the voltage increasing as the temperature detected by the temperature sensor decreases; and a voltage generating unit that generates the voltage indicated by the control signal outputted by the control unit, and to supply the generated voltage to the ferroelectric memory element. This provides a ferroelectric memory apparatus which can recover from effects of thermal stress suffered after shipment—i.e., reduction in the polarization amount needed for data retention as well as imprint degradation—using a relatively simple configuration.
Public/Granted literature
- US20080068873A1 FERROELECTRIC MEMORY APPARATUS AND CONTROL METHOD OF THE SAME Public/Granted day:2008-03-20
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