Invention Grant
US07768637B2 Method for acquiring high-resolution images of defects on the upper surface of the wafer edge
有权
用于在晶片边缘的上表面上获取缺陷的高分辨率图像的方法
- Patent Title: Method for acquiring high-resolution images of defects on the upper surface of the wafer edge
- Patent Title (中): 用于在晶片边缘的上表面上获取缺陷的高分辨率图像的方法
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Application No.: US12072156Application Date: 2008-02-25
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Publication No.: US07768637B2Publication Date: 2010-08-03
- Inventor: Detlef Schupp , Thin Van Luu
- Applicant: Detlef Schupp , Thin Van Luu
- Applicant Address: DE Weilburg
- Assignee: Vistec Semiconductor Systems GmbH
- Current Assignee: Vistec Semiconductor Systems GmbH
- Current Assignee Address: DE Weilburg
- Agency: Davidson, Davidson & Kappel, LLC
- Priority: DE102007010225 20070228
- Main IPC: G01N21/00
- IPC: G01N21/00
Abstract:
A method for acquiring high-resolution images of defects on the upper surface of the wafer edge is disclosed. For this purpose, first the position of at least one defect on the upper surface of the wafer edge is determined. The thus determined position of the defect is stored. Then the wafer is transferred into device for micro-inspection, in which the defect is examined more closely and imaged. The images acquired in the device for micro-inspection are deposited in a directory.
Public/Granted literature
- US20080204738A1 Method for acquiring high-resolution images of defects on the upper surface of the wafer edge Public/Granted day:2008-08-28
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