Invention Grant
US07768337B2 IGBT-driver circuit for desaturated turn-off with high desaturation level
有权
IGBT驱动电路,用于去饱和关断,具有高饱和度
- Patent Title: IGBT-driver circuit for desaturated turn-off with high desaturation level
- Patent Title (中): IGBT驱动电路,用于去饱和关断,具有高饱和度
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Application No.: US12331577Application Date: 2008-12-10
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Publication No.: US07768337B2Publication Date: 2010-08-03
- Inventor: Reinhold Bayerer
- Applicant: Reinhold Bayerer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H03K17/16
- IPC: H03K17/16

Abstract:
A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar transistor to desaturate the insulated gate. The desaturation circuit includes a series coupled bias voltage source, uni-directionally conducting element and switch.
Public/Granted literature
- US20090153223A1 IGBT-DRIVER CIRCUIT FOR DESATURATED TURN-OFF WITH HIGH DESATURATION LEVEL Public/Granted day:2009-06-18
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