Invention Grant
US07768337B2 IGBT-driver circuit for desaturated turn-off with high desaturation level 有权
IGBT驱动电路,用于去饱和关断,具有高饱和度

IGBT-driver circuit for desaturated turn-off with high desaturation level
Abstract:
A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar transistor to desaturate the insulated gate. The desaturation circuit includes a series coupled bias voltage source, uni-directionally conducting element and switch.
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