Invention Grant
- Patent Title: Probe card for semiconductor IC test and method of manufacturing the same
- Patent Title (中): 半导体IC测试用探针卡及其制造方法
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Application No.: US11812463Application Date: 2007-06-19
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Publication No.: US07768285B2Publication Date: 2010-08-03
- Inventor: Minoru Sanada , Yoshirou Nakata
- Applicant: Minoru Sanada , Yoshirou Nakata
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Steptoe & Johnson LLP
- Priority: JP2006-205462 20060728
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26

Abstract:
Provided is a probe card for semiconductor IC test on one principal surface of which are formed a plurality of probe electrodes, such as bump electrodes (5), and which has, in a peripheral portion thereof, a thin film sheet (9) fixed to a support, such as a ceramics ring (7). A local tension-changed portion (12) is formed in the thin film sheet (9) fixed to the ceramics ring (7) so that a tensile strain is generated, and the plurality of bump electrodes (5) are arranged in prescribed positions that connect electrically to electrodes of each semiconductor IC element of the semiconductor wafer. The tensile strain of the thin film sheet (9) is changed positively and in a sustained manner, whereby the bump electrodes (5) are rearranged in desired positions.
Public/Granted literature
- US20080150563A1 Probe card for semiconductor IC test and method of manufacturing the same Public/Granted day:2008-06-26
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