A method for forming a FIN-FET device employs a blanket planarizing layer formed upon a blanket topographic gate electrode material layer. The blanket planarizing layer is patterned and employed as a mask layer for patterning the blanket topographic gate electrode material layer to form a gate electrode. Since the blanket planarizing layer is formed as a planarizing layer, a photoresist layer formed thereupon is formed with enhanced resolution. As a result, the gate electrode is also formed with enhanced resolution. A resulting FIN-FET structure has the patterned planarizing layer formed in an inverted “U” shape upon the gate electrode.