Invention Grant
- Patent Title: Semiconductor device having high frequency components and manufacturing method thereof
- Patent Title (中): 具有高频分量的半导体器件及其制造方法
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Application No.: US11487503Application Date: 2006-07-17
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Publication No.: US07768043B2Publication Date: 2010-08-03
- Inventor: Yasuki Aihara
- Applicant: Yasuki Aihara
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2005-342199 20051128
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/00
Abstract:
A transistor is located on a GaAs substrate. An air bridge extends to provide a cavity above gate electrodes of the transistor. An opening is sealed by the end ball of a second wire. Further, the semiconductor device is wholly covered by sealing resin.
Public/Granted literature
- US20070123026A1 Semiconductor device having high frequency components and manufacturing method thereof Public/Granted day:2007-05-31
Information query
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