Invention Grant
US07768014B2 Memory device and manufacturing method thereof 有权
存储器件及其制造方法

Memory device and manufacturing method thereof
Abstract:
As for a memory element implemented in a semiconductor device typified by an RFID, it is an object of the present invention to reduce manufacturing steps and to provide a memory element and a memory circuit having the element with reduced cost. It is a feature of the present invention that a memory element sandwiched between electrodes has an organic compound, and an electrode connected to a semiconductor element controlling the memory element functions as an electrode of the memory element. In addition, an extremely thin semiconductor film formed on an insulated surface is used for the memory element; therefore cost can be reduced.
Public/Granted literature
Information query
Patent Agency Ranking
0/0