Invention Grant
- Patent Title: Memory device and manufacturing method thereof
- Patent Title (中): 存储器件及其制造方法
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Application No.: US11337554Application Date: 2006-01-24
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Publication No.: US07768014B2Publication Date: 2010-08-03
- Inventor: Yoshinobu Asami
- Applicant: Yoshinobu Asami
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-024629 20050131
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/00

Abstract:
As for a memory element implemented in a semiconductor device typified by an RFID, it is an object of the present invention to reduce manufacturing steps and to provide a memory element and a memory circuit having the element with reduced cost. It is a feature of the present invention that a memory element sandwiched between electrodes has an organic compound, and an electrode connected to a semiconductor element controlling the memory element functions as an electrode of the memory element. In addition, an extremely thin semiconductor film formed on an insulated surface is used for the memory element; therefore cost can be reduced.
Public/Granted literature
- US20060175648A1 Memory device and manufacturing method thereof Public/Granted day:2006-08-10
Information query
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