Invention Grant
- Patent Title: Method of manufacturing bonded wafer
- Patent Title (中): 制造接合晶片的方法
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Application No.: US11957674Application Date: 2007-12-17
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Publication No.: US07767549B2Publication Date: 2010-08-03
- Inventor: Hidehiko Okuda , Tatsumi Kusaba , Akihiko Endo
- Applicant: Hidehiko Okuda , Tatsumi Kusaba , Akihiko Endo
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2006-350138 20061226; JP2007-287991 20071106
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding step in which the base wafer on which the oxide film has been formed is bonded to a top wafer to form a bonded wafer, and a thinning step in which the top wafer included in the bonded wafer is thinned. The oxidation step comprises heating the base wafer to a heating temperature ranging from 800 to 1300° C. at a rate of temperature increase ranging from 1 to 300° C./second in an oxidizing atmosphere, and the bonding step is carried out so as to position the oxide film formed in the oxidation step at an interface of the top wafer and the base wafer.
Public/Granted literature
- US20080213974A1 Method of manufacturing bonded wafer Public/Granted day:2008-09-04
Information query
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