Invention Grant
- Patent Title: Memory-based fast fourier transform device
- Patent Title (中): 基于内存的快速傅里叶变换装置
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Application No.: US11213835Application Date: 2005-08-30
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Publication No.: US07752249B2Publication Date: 2010-07-06
- Inventor: Chi-Li Yu
- Applicant: Chi-Li Yu
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Bacon & Thomas, PLLC
- Priority: TW94114509A 20050505
- Main IPC: G06F15/00
- IPC: G06F15/00 ; G06F12/00 ; G06F12/06 ; G11C8/00

Abstract:
A memory-based Fast Fourier Transform device is provided, which adopts single-port random access memory (RAM), rather than dual-port RAM, as a storage, and the circuit area of the FFT device is therefore reduced. In order to enhance the access efficiency of the memory and the use efficiency of a processor, the transformer adopts a modified in-place conflict-free addressing to achieve similar performance of a traditional Fast Fourier Transform device.
Public/Granted literature
- US20060253514A1 Memory-based Fast Fourier Transform device Public/Granted day:2006-11-09
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