Invention Grant
US07751921B2 Semiconductor manufacturing apparatus, method of detecting abnormality, identifying cause of abnormality, or predicting abnormality in the semiconductor manufacturing apparatus, and storage medium storing computer program for performing the method
有权
半导体制造装置,检测异常的方法,识别异常原因或预测半导体制造装置中的异常,以及存储用于执行该方法的计算机程序的存储介质
- Patent Title: Semiconductor manufacturing apparatus, method of detecting abnormality, identifying cause of abnormality, or predicting abnormality in the semiconductor manufacturing apparatus, and storage medium storing computer program for performing the method
- Patent Title (中): 半导体制造装置,检测异常的方法,识别异常原因或预测半导体制造装置中的异常,以及存储用于执行该方法的计算机程序的存储介质
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Application No.: US11794374Application Date: 2005-12-22
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Publication No.: US07751921B2Publication Date: 2010-07-06
- Inventor: Koichi Sakamoto , Minoru Obata , Noriaki Koyama
- Applicant: Koichi Sakamoto , Minoru Obata , Noriaki Koyama
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2004-381364 20041228; JP2005-031111 20050207; JP2005-038413 20050215; JP2005-039869 20050216
- International Application: PCT/JP2005/023617 WO 20051222
- International Announcement: WO2006/070689 WO 20060706
- Main IPC: G06F19/00
- IPC: G06F19/00 ; G06F11/30

Abstract:
In order to detect an abnormality of semiconductor manufacturing apparatus, a biaxial coordinate system having first and second axes respectively assigned two different monitoring parameters selected from plural apparatus status parameters representing statuses of semiconductor manufacturing apparatus is prepared. As monitoring parameters, for example, a cumulative film thickness for deposition processes that have previously been performed in deposition apparatus and an opening of the pressure control valve located in a vacuum exhaust path to control the internal pressure of a reaction vessel are selected. Values of monitoring parameters obtained when the semiconductor manufacturing apparatus was normally operating are plotted on the biaxial coordinate system. A boundary between a normal condition and an abnormality status is set around a plot group. Values of monitoring parameters obtained during present operation of the semiconductor manufacturing apparatus are plotted on the biaxial coordinate system to determine whether or not there exists an abnormality and identify a type of abnormality based on a positional relation between the plots and the boundary.
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