Invention Grant
- Patent Title: Semiconductor device and driving method thereof
- Patent Title (中): 半导体装置及其驱动方法
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Application No.: US11358636Application Date: 2006-02-21
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Publication No.: US07751498B2Publication Date: 2010-07-06
- Inventor: Kiyoshi Kato , Yutaka Shionoiri
- Applicant: Kiyoshi Kato , Yutaka Shionoiri
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Husch Blackwell Sanders Welsh Katz
- Priority: JP2005-055197 20050228
- Main IPC: H03K9/00
- IPC: H03K9/00 ; G06K19/06

Abstract:
The invention provides a semiconductor device with high yield by reducing an effect of variations in characteristics of a semiconductor element. Further, by reducing an effect of variations in characteristics of a semiconductor element to improve productivity, an inexpensive semiconductor device can be provided. Further, an inexpensive semiconductor device can be provided by forming a semiconductor device in a large amount over a large substrate such as a glass substrate and a flexible substrate. A semiconductor device of the invention includes a demodulation signal generating circuit and an antenna or a wire for connecting the antenna. The demodulation signal generating circuit includes a demodulation circuit and a correction circuit. The correction circuit corrects a first demodulation signal generated from the demodulation circuit and generates a second demodulation signal.
Public/Granted literature
- US20060192019A1 Semiconductor device and driving method thereof Public/Granted day:2006-08-31
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