Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12005915Application Date: 2007-12-28
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Publication No.: US07751271B2Publication Date: 2010-07-06
- Inventor: Dong-Keun Kim , Seung-Lo Kim
- Applicant: Dong-Keun Kim , Seung-Lo Kim
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Priority: KR10-2007-0088929 20070903
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A semiconductor memory device includes: a reference signal delay unit configured to delay a reference signal for a predetermined operation to output a delayed reference signal; an address delay unit configured to delay a bank address to output a delayed bank address; and a decoding unit configured to receive the delayed reference signal to output a signal for determining a timing of a predetermined operation on a bank selected by the delayed bank address.
Public/Granted literature
- US20090059694A1 Semiconductor memory device Public/Granted day:2009-03-05
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