Invention Grant
US07751238B2 Memory system protected from errors due to read disturbance and reading method thereof
有权
存储器系统由于读取干扰及其读取方法而被保护免于错误
- Patent Title: Memory system protected from errors due to read disturbance and reading method thereof
- Patent Title (中): 存储器系统由于读取干扰及其读取方法而被保护免于错误
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Application No.: US12181408Application Date: 2008-07-29
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Publication No.: US07751238B2Publication Date: 2010-07-06
- Inventor: Bong-Gwan Seol
- Applicant: Bong-Gwan Seol
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR2007-78262 20070803
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/06 ; G11C8/00

Abstract:
A method of reading a memory system including a flash memory includes: reading data from a page in a first block of the flash memory, incrementing a counter each time data is read from the page to store a corresponding number of read-out cycles of the flash memory, and copying data from the first block of the flash memory to a second block of the flash memory when the counter exceeds a reference number of read-out cycles. The data from the first block includes data from the page.
Public/Granted literature
- US20090034328A1 MEMORY SYSTEM PROTECTED FROM ERRORS DUE TO READ DISTURBANCE AND READING METHOD THEREOF Public/Granted day:2009-02-05
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