Invention Grant
- Patent Title: Semiconductor device with via hole of uneven width
- Patent Title (中): 具有不均匀宽度的通孔的半导体器件
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Application No.: US11808667Application Date: 2007-06-12
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Publication No.: US07750478B2Publication Date: 2010-07-06
- Inventor: Koujiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
- Applicant: Koujiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
- Applicant Address: JP Osaka JP Tokyo JP Tokyo JP Tokyo
- Assignee: Sanyo Electric Co., Ltd.,Kabushiki Kaisha Toshiba,Fujitsu Microelectronics Limited,NEC Corporation
- Current Assignee: Sanyo Electric Co., Ltd.,Kabushiki Kaisha Toshiba,Fujitsu Microelectronics Limited,NEC Corporation
- Current Assignee Address: JP Osaka JP Tokyo JP Tokyo JP Tokyo
- Agency: Morrison & Foerster LLP
- Priority: JP2004-040403 20040217
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.
Public/Granted literature
- US20070249158A1 Semiconductor device and manufacturing method thereof Public/Granted day:2007-10-25
Information query
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