Invention Grant
- Patent Title: Phase change storage cells for memory devices
- Patent Title (中): 存储器件的相变存储单元
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Application No.: US12033509Application Date: 2008-02-19
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Publication No.: US07750431B2Publication Date: 2010-07-06
- Inventor: Horii Hideki
- Applicant: Horii Hideki
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR2003-0013416 20030304
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
Storage cells for a semiconductor device can include a first layer of phase change material on a substrate and a second layer of phase change material being in contact with the first layer, the second layer of phase change material having a higher resistance than the first layer.
Public/Granted literature
- US20080205127A1 PHASE CHANGE STORAGE CELLS FOR MEMORY DEVICES Public/Granted day:2008-08-28
Information query
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