Invention Grant
- Patent Title: Semitransmissive liquid crystal display device and manufacturing method thereof
- Patent Title (中): 半透射型液晶显示装置及其制造方法
-
Application No.: US11093223Application Date: 2005-03-30
-
Publication No.: US07733446B2Publication Date: 2010-06-08
- Inventor: Yuichi Masutani , Shingo Nagano , Takuji Yoshida , Nobuaki Ishiga , Kazunori Inoue
- Applicant: Yuichi Masutani , Shingo Nagano , Takuji Yoshida , Nobuaki Ishiga , Kazunori Inoue
- Applicant Address: JP Chiyoda-Ku, Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Chiyoda-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2004-110299 20040402
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G02F1/1335

Abstract:
The present invention intends to provide a manufacturing method of a semi-transmissive liquid crystal display device in which method a structure and manufacturing process thereof are simplified to enable to reduce the manufacturing cost. In order to achieve the above object, a semi-transmissive liquid crystal display device in the invention has a layer constitution in which a reflective pixel electrode is formed with a second conductive film that constitutes a source electrode, a drain electrode, a source wiring and so on and on an upper layer of the second metal film a transmissive pixel electrode made of a transparent conductive film is formed through the insulating film. A TFT array substrate can be formed through 5 times of photoengraving process.
Public/Granted literature
- US20050219451A1 Semitransmissive liquid crystal display device and manufacturing method thereof Public/Granted day:2005-10-06
Information query
IPC分类: