Invention Grant
US07732902B2 Semiconductor package with getter formed over an irregular structure
有权
具有吸气剂的半导体封装形成在不规则结构上
- Patent Title: Semiconductor package with getter formed over an irregular structure
- Patent Title (中): 具有吸气剂的半导体封装形成在不规则结构上
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Application No.: US11516469Application Date: 2006-09-05
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Publication No.: US07732902B2Publication Date: 2010-06-08
- Inventor: James C. McKinnell , Chien-Hua Chen , Kenneth Diest , Kenneth M. Kramer , Daniel A. Kearl
- Applicant: James C. McKinnell , Chien-Hua Chen , Kenneth Diest , Kenneth M. Kramer , Daniel A. Kearl
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
A semiconductor package includes a substrate having a first surface portion in a cavity. The first surface portion includes an artificially formed grass structure. The package includes a getter film formed over the grass structure.
Public/Granted literature
- US20070052108A1 Semiconductor package with getter formed over an irregular structure Public/Granted day:2007-03-08
Information query
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