Invention Grant
- Patent Title: Laterally diffused MOSFET
- Patent Title (中): 横向MOSFET扩散
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Application No.: US12120158Application Date: 2008-05-13
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Publication No.: US07732863B2Publication Date: 2010-06-08
- Inventor: Sameer Pendharkar , Binghua Hu
- Applicant: Sameer Pendharkar , Binghua Hu
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A LDMOS transistor having a channel region located between an outer boundary of an n-type region and an inner boundary of a p-body region. A width of the LDMOS channel region is less than 80% of a distance between an outer boundary of an n+-type region and the inner boundary of a p-body region. Also, a method for making a LDMOS transistor where the n-type dopants are implanted at an angle that is greater than an angle used to implant the p-type dopants. Furthermore, a VDMOS having first and second channel regions located between an inner boundary of a first and second p-body region and an outer boundary of an n-type region of the first and second p-body regions. The width of the first and second channel regions of the VDMOS is less than 80% of a distance between the inner boundary of the first and second p-body regions and an outer boundary of an n+-type region of the first and second p-body regions. Moreover, a method for making a VDMOS transistor where the n-type dopants are implanted at an angle that is greater than an angle used to implant the p-type dopants.
Public/Granted literature
- US20090283827A1 Formation Of A MOSFET Using An Angled Implant Public/Granted day:2009-11-19
Information query
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