Invention Grant
US07729174B2 Nonvolatile memory device having a bit line select voltage generator adapted to a temperature change 有权
具有适于温度变化的位线选择电压发生器的非易失性存储器件

Nonvolatile memory device having a bit line select voltage generator adapted to a temperature change
Abstract:
A bit line select voltage generator includes a first voltage generator, a second voltage generator, and a voltage transmission unit. The first voltage generator is configured to divide a reference voltage of a reference voltage generator, generate a control voltage, and generate a first voltage in response to the control voltage. In this case, the first voltage is raised according to an increase of a temperature and output. The second voltage generator is configured to divide the reference voltage and generate a second voltage of a level lower than that of the first voltage. The voltage transmission unit is configured to transmit the first voltage or the second voltage to an output terminal according to a voltage level of a first voltage transmit control signal or a second voltage transmit control signal.
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