Invention Grant
US07729174B2 Nonvolatile memory device having a bit line select voltage generator adapted to a temperature change
有权
具有适于温度变化的位线选择电压发生器的非易失性存储器件
- Patent Title: Nonvolatile memory device having a bit line select voltage generator adapted to a temperature change
- Patent Title (中): 具有适于温度变化的位线选择电压发生器的非易失性存储器件
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Application No.: US11949655Application Date: 2007-12-03
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Publication No.: US07729174B2Publication Date: 2010-06-01
- Inventor: Jin-Haeng Lee
- Applicant: Jin-Haeng Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0015352 20070214
- Main IPC: G11C16/26
- IPC: G11C16/26

Abstract:
A bit line select voltage generator includes a first voltage generator, a second voltage generator, and a voltage transmission unit. The first voltage generator is configured to divide a reference voltage of a reference voltage generator, generate a control voltage, and generate a first voltage in response to the control voltage. In this case, the first voltage is raised according to an increase of a temperature and output. The second voltage generator is configured to divide the reference voltage and generate a second voltage of a level lower than that of the first voltage. The voltage transmission unit is configured to transmit the first voltage or the second voltage to an output terminal according to a voltage level of a first voltage transmit control signal or a second voltage transmit control signal.
Public/Granted literature
- US20080192536A1 BIT LINE SELECT VOLTAGE GENERATOR AND NONVOLATILE MEMORY DEVICE USING THE SAME Public/Granted day:2008-08-14
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