Invention Grant
- Patent Title: Semiconductor device, a method of manufacturing the same and an electronic device
- Patent Title (中): 半导体装置及其制造方法以及电子装置
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Application No.: US12155479Application Date: 2008-06-05
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Publication No.: US07728416B2Publication Date: 2010-06-01
- Inventor: Yukihiro Satou , Takeshi Otani , Hiroyuki Takahashi , Toshiyuki Hata , Ichio Shimizu
- Applicant: Yukihiro Satou , Takeshi Otani , Hiroyuki Takahashi , Toshiyuki Hata , Ichio Shimizu
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, P.C.
- Priority: JP2003-054638 20030228
- Main IPC: H01L23/495
- IPC: H01L23/495
Abstract:
A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.
Public/Granted literature
- US20090001559A1 Semiconductor device, a method of manufacturing the same and an electronic device Public/Granted day:2009-01-01
Information query
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