Invention Grant
- Patent Title: Thin film transistor array panel for X-ray detector
- Patent Title (中): 用于X射线检测器的薄膜晶体管阵列面板
-
Application No.: US10538779Application Date: 2003-12-11
-
Publication No.: US07728329B2Publication Date: 2010-06-01
- Inventor: In-Su Joo , Joon-Hoo Choi
- Applicant: In-Su Joo , Joon-Hoo Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2002-0078745 20021211
- International Application: PCT/KR03/02708 WO 20031211
- International Announcement: WO2004/054005 WO 20040624
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20

Abstract:
A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes (178,195) facing each other and a photo-conductive layer (800) disposed between the first electrode and the second electrode. The TFT includes a semiconductor layer (150), a gate electrode (123), a source electrode (173) connected to a data line, a drain electrode (175) connected to the photo diode. The dummy pixel further includes a light blocking layer (196) for blocking light incident on the photo diode. Alternatively, the semiconductor layer is disconnected between the source electrode and the drain electrode.
Public/Granted literature
- US20060124932A1 Thin film transistor array panel for x-ray detector Public/Granted day:2006-06-15
Information query
IPC分类: