Invention Grant
US07710773B2 Nonvolatile memory devices that support virtual page storage using odd-state memory cells
有权
支持使用奇状态存储单元的虚拟页面存储的非易失性存储器件
- Patent Title: Nonvolatile memory devices that support virtual page storage using odd-state memory cells
- Patent Title (中): 支持使用奇状态存储单元的虚拟页面存储的非易失性存储器件
-
Application No.: US12350588Application Date: 2009-01-08
-
Publication No.: US07710773B2Publication Date: 2010-05-04
- Inventor: Sang Won Hwang
- Applicant: Sang Won Hwang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR2005-34825 20050427
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/56

Abstract:
A nonvolatile memory array includes first and second blocks of three-state memory cells therein. These first and second blocks are configured to operate individually as first and second blocks of physical memory cells, respectively, and collectively as an additional block of virtual memory cells. The first and second blocks of memory cells and the additional block of virtual memory cells may be read independently to provide a total of three blocks of read data.
Public/Granted literature
- US20090129161A1 Nonvolatile Memory Devices that Support Virtual Page Storage Using Odd-State Memory Cells Public/Granted day:2009-05-21
Information query