Invention Grant
- Patent Title: Thin film piezoelectric resonator and method of manufacturing the same
- Patent Title (中): 薄膜压电谐振器及其制造方法
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Application No.: US10582229Application Date: 2006-03-29
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Publication No.: US07709999B2Publication Date: 2010-05-04
- Inventor: Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
- Applicant: Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-229815 20050808
- International Application: PCT/JP2006/007155 WO 20060329
- International Announcement: WO2007/017974 WO 20070215
- Main IPC: H01L41/047
- IPC: H01L41/047
Abstract:
A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.
Public/Granted literature
- US20090033177A1 THIN FILM PIEZOELECTRIC RESONATOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-02-05
Information query
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