Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12351084Application Date: 2009-01-09
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Publication No.: US07709957B2Publication Date: 2010-05-04
- Inventor: Kenichi Ishii
- Applicant: Kenichi Ishii
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2008-001864 20080109
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
The present invention provides a semiconductor device exhibiting an improved reliability of a bump coupling section. A semiconductor device is provided, which comprises: an interconnect layer; a stress-relaxing layer, covering the interconnect layer and provided with an opening exposing at least a portion of the interconnect layer; a post, covering the opening and provided so as to overlap with the stress-relaxing layer disposed around the opening; and a resin layer, provided around the post to cover the stress-relaxing layer, wherein a value of 2A/C is within a range of from 0.1 to 0.5, wherein C is a diameter of the post and 2A is a width of an overlapping region of the stress-relaxing layer with the post.
Public/Granted literature
- US20090174074A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-07-09
Information query
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