Invention Grant
US07709947B2 Semiconductor device having semiconductor element with back electrode on insulating substrate
有权
半导体器件具有在绝缘衬底上具有背电极的半导体元件
- Patent Title: Semiconductor device having semiconductor element with back electrode on insulating substrate
- Patent Title (中): 半导体器件具有在绝缘衬底上具有背电极的半导体元件
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Application No.: US11763150Application Date: 2007-06-14
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Publication No.: US07709947B2Publication Date: 2010-05-04
- Inventor: Jun Ishikawa
- Applicant: Jun Ishikawa
- Applicant Address: JP
- Assignee: Kabushiki Kaisha Toyota Jidoshokki
- Current Assignee: Kabushiki Kaisha Toyota Jidoshokki
- Current Assignee Address: JP
- Agency: Woodcock Washburn LLP
- Priority: JP2006-165781 20060615
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
The first external electrode has a main body portion a part of which is buried in a side wall of a case and joining portions protruding from an end of the main body portion toward the inside of the case. Each joining portion of the first external electrode is formed to have a thickness smaller than that of the main body portion, and an end portion of each joining portion is directly joined onto a wiring pattern of the insulating substrate through ultrasonic joining. Therefore, a load and ultrasonic vibration necessary for joining the joining portion onto the wiring pattern can be suppressed, which makes it possible to directly join the first external electrode onto the wiring pattern of the insulating substrate without damaging an insulating member of the insulating substrate.
Public/Granted literature
- US20070290342A1 SEMICONDUCTOR DEVICE Public/Granted day:2007-12-20
Information query
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