Invention Grant
US07709911B2 Semiconductor device having silicide transistors and non-silicide transistors formed on the same substrate and method for fabricating the same
有权
具有形成在同一衬底上的硅化物晶体管和非硅化物晶体管的半导体器件及其制造方法
- Patent Title: Semiconductor device having silicide transistors and non-silicide transistors formed on the same substrate and method for fabricating the same
- Patent Title (中): 具有形成在同一衬底上的硅化物晶体管和非硅化物晶体管的半导体器件及其制造方法
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Application No.: US11522996Application Date: 2006-09-19
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Publication No.: US07709911B2Publication Date: 2010-05-04
- Inventor: Masayuki Kamei , Isao Miyanaga , Takayuki Yamada
- Applicant: Masayuki Kamei , Isao Miyanaga , Takayuki Yamada
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-358103 20051212
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device includes a first MIS transistor of a non-salicide structure and a second MIS transistor of a salicide structure which are both formed on a substrate of silicon. The first MIS transistor includes a first gate electrode of silicon, first sidewalls, a first source and drain, and plasma reaction films grown in a plasma atmosphere to cover the top surfaces of the first gate electrode and first source and drain, wherein the plasma reaction film prevents silicide formation on the first MIS transistor.
Public/Granted literature
- US20070131984A1 Semiconductor device and method for fabricating the same Public/Granted day:2007-06-14
Information query
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