Semiconductor integrated circuit device

Invention Grant

US07709881B2 Semiconductor integrated circuit device 失效

Title translation: 半导体集成电路器件

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Patent Title: Semiconductor integrated circuit device
Patent Title (中): 半导体集成电路器件
Application No.: US11338714

Application Date: 2006-01-25
Publication No.: US07709881B2

Publication Date: 2010-05-04
Inventor: Yasuhiko Matsunaga
Applicant: Yasuhiko Matsunaga
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2005-175343 20050615
Main IPC: H01L29/788
IPC: H01L29/788

Abstract:

A control gate includes a first conductive film formed in contact with an inter-gate insulating film and a second conductive film electrically connected to the first conductive film. An inter-level insulating film which insulates first and second stacked gate structures from each other. The inter-level insulating film includes a first insulating film, a second insulating film, and a third insulating film formed between the first and second insulating films. The first insulating film insulates the floating gates from each other and portions of the control gates from each other. The second and third insulating films insulate the other portions of the control gates from each other. The third insulating film has a selective etching ratio with respect to the first and second insulating films.

Abstract(Chinese):

控制栅极包括与栅极间绝缘膜接触形成的第一导电膜和与第一导电膜电连接的第二导电膜。一种将第一和第二堆叠栅极结构彼此绝缘的层间绝缘膜。层间绝缘膜包括形成在第一和第二绝缘膜之间的第一绝缘膜，第二绝缘膜和第三绝缘膜。第一绝缘膜将浮动栅极彼此隔离，并且控制栅极的一部分彼此绝缘。第二和第三绝缘膜将控制栅极的其他部分彼此绝缘。第三绝缘膜相对于第一绝缘膜和第二绝缘膜具有选择性蚀刻比。

Public/Granted literature

US20060284268A1 Semiconductor integrated circuit device Public/Granted day:2006-12-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/788	......带有浮栅的