Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity

Invention Grant

US07709875B2 Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity 有权

Title translation: 存储单元包括具有提高的读取灵敏度的隔离体的一个MOS晶体管

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Patent Title: Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity
Patent Title (中): 存储单元包括具有提高的读取灵敏度的隔离体的一个MOS晶体管
Application No.: US11492706

Application Date: 2006-07-25
Publication No.: US07709875B2

Publication Date: 2010-05-04
Inventor: Alexandre Villaret , Pascale Mazoyer , Rossella Ranica
Applicant: Alexandre Villaret , Pascale Mazoyer , Rossella Ranica
Applicant Address: FR Crolles
Assignee: STMicroelectronics Crolles 2 SAS
Current Assignee: STMicroelectronics Crolles 2 SAS
Current Assignee Address: FR Crolles
Agency: Wolf, Greenfield & Sacks, P.C.
Agent Lisa K. Jorgenson; James H. Morris
Priority: FR0552307 20050726
Main IPC: H01L29/94
IPC: H01L29/94

Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity

Abstract:

A memory cell with one MOS transistor formed in a floating body region isolated on its lower surface by a junction. A region of the same conductivity type as the floating body region but more heavily doped than said region is arranged under the drain region of the MOS transistor.

Abstract(Chinese):

一个具有一个MOS晶体管的存储单元，其形成在浮动体区域中，该浮动体区域在其下表面上被一个结隔离。与MOS晶体管的漏极区域配置在与浮动体区域相同的导电类型的区域，但是比所述区域更重掺杂的区域。

Public/Granted literature

US20070023809A1 Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity Public/Granted day:2007-02-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/94	....金属—绝缘体—半导体，例如MOS