Invention Grant
US07709865B2 Substrate for an organic field effect transistor, use of said substrate, method of increasing the charge carrier mobility, and organic field effect transistor (OFET)
失效
用于有机场效应晶体管的衬底，使用所述衬底，增加电荷载流子迁移率的方法和有机场效应晶体管（OFET）
- Patent Title: Substrate for an organic field effect transistor, use of said substrate, method of increasing the charge carrier mobility, and organic field effect transistor (OFET)
- Patent Title (中): 用于有机场效应晶体管的衬底，使用所述衬底，增加电荷载流子迁移率的方法和有机场效应晶体管（OFET）
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Application No.: US10517750Application Date: 2003-06-06
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Publication No.: US07709865B2Publication Date: 2010-05-04
- Inventor: Wolfgang Clemens , Henning Rost
- Applicant: Wolfgang Clemens , Henning Rost
- Applicant Address: DE Furth
- Assignee: PolyIC GmbH & Co. KG
- Current Assignee: PolyIC GmbH & Co. KG
- Current Assignee Address: DE Furth
- Agency: Carella, Byrne, et al.
- Agent Elliot M. Olstein; William Squire
- Priority: DE10226370 20020613
- International Application: PCT/DE03/01899 WO 20030606
- International Announcement: WO03/107450 WO 20031224
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00 ; H01L23/58 ; H01L51/30 ; H01L29/04 ; H01L29/43
Abstract:
An organic field effect transistor includes a well-ordered substrate layer on which organic functional material is deposited. A method of increasing the charge carrier mobility of the organic field effect transistor substrate layer is achieved by depositing onto the substrate an organic functional material, the substrate being in the form of a well-ordered layer. The method and transistor include using a well-ordered plastics film as the substrate layer.
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