Invention Grant
US07709859B2 Cap layers including aluminum nitride for nitride-based transistors
有权
盖层包括用于基于氮化物的晶体管的氮化铝
- Patent Title: Cap layers including aluminum nitride for nitride-based transistors
- Patent Title (中): 盖层包括用于基于氮化物的晶体管的氮化铝
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Application No.: US11684747Application Date: 2007-03-12
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Publication No.: US07709859B2Publication Date: 2010-05-04
- Inventor: Richard Peter Smith , Adam William Saxler , Scott T. Sheppard
- Applicant: Richard Peter Smith , Adam William Saxler , Scott T. Sheppard
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L21/338
Abstract:
High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
Public/Granted literature
- US20070164315A1 Cap Layers Including Aluminum Nitride for Nitride-Based Transistors and Methods of Fabricating Same Public/Granted day:2007-07-19
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