Invention Grant
- Patent Title: Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and processes for production thereof
- Patent Title (中): 配备有由半导体元件构成的半导体电路的半导体装置及其制造方法
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Application No.: US11480429Application Date: 2006-07-05
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Publication No.: US07709844B2Publication Date: 2010-05-04
- Inventor: Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
- Applicant: Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP10-202377 19980716
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400-700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.
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