Invention Grant
US07709391B2 Methods for in-situ generation of reactive etch and growth specie in film formation processes
有权
在膜形成过程中原位产生反应性蚀刻和生长物质的方法
- Patent Title: Methods for in-situ generation of reactive etch and growth specie in film formation processes
- Patent Title (中): 在膜形成过程中原位产生反应性蚀刻和生长物质的方法
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Application No.: US11336178Application Date: 2006-01-20
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Publication No.: US07709391B2Publication Date: 2010-05-04
- Inventor: Satheesh Kuppurao , David K. Carlson , Howard Beckford , Errol Sanchez
- Applicant: Satheesh Kuppurao , David K. Carlson , Howard Beckford , Errol Sanchez
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Diehl Servilla, LLC
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.
Public/Granted literature
- US20070170148A1 Methods for in-situ generation of reactive etch and growth specie in film formation processes Public/Granted day:2007-07-26
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