Semiconductor device with a line and method of fabrication thereof

Invention Grant

US07709388B2 Semiconductor device with a line and method of fabrication thereof 有权

Title translation: 具有线的半导体器件及其制造方法

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Patent Title: Semiconductor device with a line and method of fabrication thereof
Patent Title (中): 具有线的半导体器件及其制造方法
Application No.: US11676962

Application Date: 2007-02-20
Publication No.: US07709388B2

Publication Date: 2010-05-04
Inventor: Kazuyoshi Maekawa , Kenichi Mori
Applicant: Kazuyoshi Maekawa , Kenichi Mori
Applicant Address: JP Tokyo
Assignee: Renesas Technology Corp.
Current Assignee: Renesas Technology Corp.
Current Assignee Address: JP Tokyo
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2004-172500 20040610; JP2005-165252 20050606
Main IPC: H01L21/311
IPC: H01L21/311

Semiconductor device with a line and method of fabrication thereof

Abstract:

A semiconductor device includes an interlayer insulation film, an underlying line provided in the interlayer insulation film, a liner film overlying the interlayer insulation film, an interlayer insulation film overlying the liner film. The underlying line has a lower hole and the liner film and the interlayer insulation film have an upper hole communicating with the lower hole, and the lower hole is larger in diameter than the upper hole. The semiconductor device further includes a conductive film provided at an internal wall surface of the lower hole, a barrier metal provided along an internal wall surface of the upper hole, and a Cu film filling the upper and lower holes. The conductive film contains a substance identical to a substance of the barrier metal. A highly reliable semiconductor device can thus be obtained.

Abstract(Chinese):

半导体器件包括层间绝缘膜，设置在层间绝缘膜中的底层线，覆盖层间绝缘膜的衬里膜，覆盖衬垫膜的层间绝缘膜。底线具有较低的孔，衬里膜和层间绝缘膜具有与下孔连通的上孔，下孔的直径大于上孔。半导体器件还包括设置在下孔内壁表面的导电膜，沿着上孔的内壁表面设置的阻挡金属和填充上孔和下孔的Cu膜。导电膜含有与阻挡金属物质相同的物质。因此可以获得高可靠性的半导体器件。

Public/Granted literature

US20070141831A1 SEMICONDUCTOR DEVICE WITH A LINE AND METHOD OF FABRICATION THEREOF Public/Granted day:2007-06-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀