Invention Grant
- Patent Title: Tantalum amide complexes for depositing tantalum-containing films, and method of making same
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Application No.: US12119463Application Date: 2008-05-12
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Publication No.: US07709384B2Publication Date: 2010-05-04
- Inventor: Tianniu Chen , Chongying Xu , Thomas H. Baum
- Applicant: Tianniu Chen , Chongying Xu , Thomas H. Baum
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Intellectual Property Technology Law
- Agent Steven J. Hultquist; Maggie Chappuis
- Main IPC: H01L21/44
- IPC: H01L21/44 ; C07F9/00
Abstract:
Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.
Public/Granted literature
- US20090004858A1 TANTALUM AMIDE COMPLEXES FOR DEPOSITING TANTALUM-CONTAINING FILMS, AND METHOD OF MAKING SAME Public/Granted day:2009-01-01
Information query
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