Invention Grant
- Patent Title: Semiconductor device fabricating method
- Patent Title (中): 半导体器件制造方法
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Application No.: US11986530Application Date: 2007-11-20
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Publication No.: US07709381B2Publication Date: 2010-05-04
- Inventor: Jaewon Han , Dong Ki Jeon
- Applicant: Jaewon Han , Dong Ki Jeon
- Applicant Address: KR Seoul
- Assignee: Dongbu Hi Tek Co., Ltd.
- Current Assignee: Dongbu Hi Tek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Fortney
- Priority: KR10-2006-0134783 20061227
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A semiconductor device fabricating method may include forming an insulating layer on a semiconductor substrate; forming a through hole with a first depth in the insulating layer and the semiconductor substrate; forming a metal layer thereon, thereby forming a through electrode in the through hole; and exposing the through electrode by polishing the bottom surface of the semiconductor substrate.
Public/Granted literature
- US20080160757A1 Semiconductor device fabricating method Public/Granted day:2008-07-03
Information query
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