Invention Grant
- Patent Title: Method for fabricating semiconductor device and semiconductor device
- Patent Title (中): 制造半导体器件和半导体器件的方法
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Application No.: US12175237Application Date: 2008-07-17
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Publication No.: US07709376B2Publication Date: 2010-05-04
- Inventor: Hideto Matsuyama , Fumio Hoshi
- Applicant: Hideto Matsuyama , Fumio Hoshi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2007-186959 20070718
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A method for fabricating a semiconductor device includes forming a dielectric film on a semiconductor substrate; forming an opening in the dielectric film; forming a refractory metal film in the opening; performing a nitriding process to the refractory metal film; removing a nitride of the refractory metal film formed on a side wall of the opening; and depositing tungsten (W) in the opening from which the nitride is removed.
Public/Granted literature
- US20090026626A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2009-01-29
Information query
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