Invention Grant
- Patent Title: Method for manufacturing SOI substrate and semiconductor device
- Patent Title (中): 制造SOI衬底和半导体器件的方法
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Application No.: US12076763Application Date: 2008-03-21
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Publication No.: US07709337B2Publication Date: 2010-05-04
- Inventor: Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
- Applicant: Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Offices, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-112239 20070420
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8222
Abstract:
It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
Public/Granted literature
- US20080261379A1 Method for manufacturing SOI substrate and semiconductor device Public/Granted day:2008-10-23
Information query
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