Method for manufacturing a semiconductor device

Invention Grant

US07709302B2 Method for manufacturing a semiconductor device 失效

Title translation: 半导体器件的制造方法

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Patent Title: Method for manufacturing a semiconductor device
Patent Title (中): 半导体器件的制造方法
Application No.: US10752993

Application Date: 2004-01-08
Publication No.: US07709302B2

Publication Date: 2010-05-04
Inventor: Setsuo Nakajima
Applicant: Setsuo Nakajima
Applicant Address: JP Kanagawa-Ken
Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee Address: JP Kanagawa-Ken
Agency: Nixon Peabody LLP
Agent Jeffrey L. Costellia
Priority: JP2001-133518 20010427
Main IPC: H01L21/84
IPC: H01L21/84 ; H01L21/336 ; H01L21/20 ; H01L21/42

Method for manufacturing a semiconductor device

Abstract:

A purpose of the invention is to provide a method for leveling a semiconductor layer without increasing the number and the complication of manufacturing processes as well as without deteriorating a crystal characteristic, and a method for leveling a surface of a semiconductor layer to stabilize an interface between the surface of the semiconductor layer and a gate insulating film, in order to achieve a TFT having a good characteristic.In an atmosphere of one kind or a plural kinds of gas selected from hydrogen or inert gas (nitrogen, argon, helium, neon, krypton and xenon), radiation with a laser beam in the first, second and third conditions is carried out in order, wherein the first condition laser beam is radiated for crystallizing a semiconductor film or improving a crystal characteristic; the second condition laser beam is radiated for eliminating an oxide film; and the third condition laser beam is radiated for leveling a surface of the crystallized semiconductor film.

Abstract(Chinese):

本发明的目的是提供一种在不增加制造工艺的数量和复杂性以及不劣化晶体特性的情况下调整半导体层的方法，以及用于使半导体层的表面平整以稳定第半导体层的表面和栅极绝缘膜，以实现具有良好特性的TFT。在选自氢或惰性气体（氮气，氩气，氦气，氖气，氪气和氙气）中的一种或多种气体的气氛中，按照第一，第二和第三条件的激光束依次进行其中辐射第一状态激光束以使半导体膜结晶或提高晶体特性; 第二条件激光束被辐射以消除氧化膜; 并且第三条件激光束被照射以使结晶的半导体膜的表面平整。

Public/Granted literature

US20040142581A1 Method for manufacturing a semiconductor device Public/Granted day:2004-07-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体