Invention Grant
US07709277B2 PAA-based etchant, methods of using same, and resultant structures
有权
基于PAA的蚀刻剂，使用它的方法以及所得结构
- Patent Title: PAA-based etchant, methods of using same, and resultant structures
- Patent Title (中): 基于PAA的蚀刻剂，使用它的方法以及所得结构
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Application No.: US11600224Application Date: 2006-11-16
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Publication No.: US07709277B2Publication Date: 2010-05-04
- Inventor: Hyo-san Lee , Hung-ho Ko , Chang-ki Hong , Sang-jun Choi
- Applicant: Hyo-san Lee , Hung-ho Ko , Chang-ki Hong , Sang-jun Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2003-0057009 20030813; KR10-2004-0024020 20040408
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/302 ; H01L21/461
Abstract:
A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
Public/Granted literature
- US20070111532A1 PAA-based etchant, methods of using same, and resultant structures Public/Granted day:2007-05-17
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