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US07709186B2 Method for exposing photoresist film of semiconductor device 失效
曝光半导体器件的光致抗蚀剂膜的方法

Method for exposing photoresist film of semiconductor device
Abstract:
A method for exposing photoresist film of semiconductor device is disclosed. In accordance with the method, wafer is sequentially shifted the wafer by a predetermined distance so that the exposed regions before and after each shift have an overlapping region having an area larger than or equal to that of the die pattern to prevent defects on the exposure mask from being transcribed to the photoresist film.
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