Invention Grant
- Patent Title: Method for exposing photoresist film of semiconductor device
- Patent Title (中): 曝光半导体器件的光致抗蚀剂膜的方法
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Application No.: US10879134Application Date: 2004-06-30
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Publication No.: US07709186B2Publication Date: 2010-05-04
- Inventor: Sang Man Bae
- Applicant: Sang Man Bae
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2003-0085953 20031129
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method for exposing photoresist film of semiconductor device is disclosed. In accordance with the method, wafer is sequentially shifted the wafer by a predetermined distance so that the exposed regions before and after each shift have an overlapping region having an area larger than or equal to that of the die pattern to prevent defects on the exposure mask from being transcribed to the photoresist film.
Public/Granted literature
- US20050118538A1 Method for exposing photoresist film of semiconductor device Public/Granted day:2005-06-02
Information query
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