Invention Grant
- Patent Title: Method for processing a semiconductor wafer
- Patent Title (中): 半导体晶片的处理方法
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Application No.: US11495956Application Date: 2006-07-28
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Publication No.: US07708855B2Publication Date: 2010-05-04
- Inventor: Karl Heinz Priewasser
- Applicant: Karl Heinz Priewasser
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2005-221298 20050729
- Main IPC: B32B37/02
- IPC: B32B37/02 ; B32B37/12 ; B32B38/04 ; B32B38/10 ; B29C65/52 ; B29C65/16 ; B32B37/14 ; B32B38/18 ; B29C65/02

Abstract:
Disclosed is a method for processing a semiconductor wafer having plural devices divided by streets on a front surface thereof, the method comprising: adhering an adhesive film to a back surface of the semiconductor wafer; cutting the semiconductor wafer along the streets, thereby making pieces of devices; wherein the adhesive film is cut into a shape and a size identical to those of the streets by a laser beam; the semiconductor wafer is positioned such that streets coincide with cut lines of the adhesive film; the adhesive film is adhered to the semiconductor wafer.
Public/Granted literature
- US20070023136A1 Method for processing a semiconductor wafer Public/Granted day:2007-02-01
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