Invention Grant
US07706201B2 Integrated circuit with Resistivity changing memory cells and methods of operating the same 有权
具有电阻率变化的存储单元的集成电路及其操作方法

Integrated circuit with Resistivity changing memory cells and methods of operating the same
Abstract:
An integrated circuit includes a plurality of resistivity changing memory cells and at least one resistivity changing reference cell; a voltage comparator including a first and second input terminals; a signal line connected to the memory cells, the reference cell, and the second input terminal; and a switching element connecting the first input terminal to the second input terminal. A method of operating the integrated circuit includes closing the switching element; supplying a first voltage to the first input terminal via the signal line and the switching element; opening the switching element; supplying a second voltage to the second input terminal via the signal line; and comparing the first and second voltages using the voltage comparator, wherein the first voltage represents a memory state of a memory cell, and the second voltage is a reference voltage which represents a memory state of a reference cell, or vice versa.
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