Invention Grant
- Patent Title: Systems and methods to reduce interference between memory cells
- Patent Title (中): 减少存储单元间干扰的系统和方法
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Application No.: US12005994Application Date: 2007-12-28
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Publication No.: US07706191B2Publication Date: 2010-04-27
- Inventor: Giovanni Santin , Violante Moschiano
- Applicant: Giovanni Santin , Violante Moschiano
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Priority: ITTO2006A000931 20061229
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
Embodiments of the inventive subject matter provide systems and methods for programming a set of memory cells by inducing a first voltage on the lower page of a first group of memory cells to hold a first least significant bit, and by inducing a second voltage on the lower page of a second group of memory cells to hold a second least significant bit. Once the lower page is programmed, the voltage may be shifted to the upper page of each memory cell into a final range representing one or more most significant bits to be programmed. Each memory cell may store a voltage within a final programmed range representing a binary value.
Public/Granted literature
- US20080205155A1 Systems and methods to reduce interference between memory cells Public/Granted day:2008-08-28
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