Invention Grant
US07706191B2 Systems and methods to reduce interference between memory cells 有权
减少存储单元间干扰的系统和方法

Systems and methods to reduce interference between memory cells
Abstract:
Embodiments of the inventive subject matter provide systems and methods for programming a set of memory cells by inducing a first voltage on the lower page of a first group of memory cells to hold a first least significant bit, and by inducing a second voltage on the lower page of a second group of memory cells to hold a second least significant bit. Once the lower page is programmed, the voltage may be shifted to the upper page of each memory cell into a final range representing one or more most significant bits to be programmed. Each memory cell may store a voltage within a final programmed range representing a binary value.
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