Invention Grant
- Patent Title: Low thermal coefficient of resistivity on-slider tunneling magneto-resistive shunt resistor
- Patent Title (中): 电阻率低热导系数隧道磁阻分流电阻的低热系数
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Application No.: US11582851Application Date: 2006-10-17
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Publication No.: US07706109B2Publication Date: 2010-04-27
- Inventor: Mark Nichols , Bill Edward Higgins , Michael Mallary , Lydia Baril
- Applicant: Mark Nichols , Bill Edward Higgins , Michael Mallary , Lydia Baril
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Westman, Champlin & Kelly, P.A.
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11B5/40

Abstract:
A slider includes a Tunneling Magneto-Resistive (TuMR) read sensor and a shunt resistor connected in parallel. The shunt resistor may be located in a read structure of the slider. The shunt resistor may reduce a total resistance of the read structure and any corresponding impedance mismatch between the read structure, a transmission line, and a preamplifier. The shunt resistor may be made of a material having a near zero thermal coefficient of resistivity (TCR) to test a quality of the TuMR read sensor. The TuMR read sensor may be deemed defective if its TCR deviates from a population average by a specific criterion. The TuMR read sensor may include a MgO tunneling barrier to improve signal strength. The TuMR read sensor may include a free layer that is able to be saturated with a perpendicular background field to calculate a more accurate TCR of the TuMR read sensor.
Public/Granted literature
- US20070091512A1 Low thermal coefficient of resistivity on-slider tunneling magneto-resistive shunt resistor Public/Granted day:2007-04-26
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