Invention Grant
- Patent Title: Semiconductor devices and methods of forming interconnection lines therein
- Patent Title (中): 在其中形成互连线的半导体器件和方法
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Application No.: US12196263Application Date: 2008-08-21
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Publication No.: US07705459B2Publication Date: 2010-04-27
- Inventor: Sang-Kwon Kim
- Applicant: Sang-Kwon Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Fortney; Sharon E. Brown Turner
- Priority: KR10-2004-0107889 20041217
- Main IPC: H01L29/40
- IPC: H01L29/40

Abstract:
An example disclosed semiconductor device includes a semiconductor substrate, a lower interlayer insulating layer formed on the substrate, a lower wire formed on the lower interlayer insulating layer, and an upper interlayer insulating layer which is formed on the lower interlayer insulating layer and has a via hole to expose the lower wire. The lower wire includes a metal layer pattern and a conductive layer pattern, and the metal layer pattern has a protruding portion and the conductive layer pattern is formed on the upper part of the protruding portion of the metal layer pattern and has a hole to expose the protruding portion.
Public/Granted literature
- US20080303156A1 Semiconductor Devices and Methods of Forming Interconnection Lines Therein Public/Granted day:2008-12-11
Information query
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