Invention Grant
- Patent Title: Substrate having through-wafer vias and method of forming
- Patent Title (中): 具有贯通晶片通孔的基板和成型方法
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Application No.: US11851857Application Date: 2007-09-07
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Publication No.: US07705440B2Publication Date: 2010-04-27
- Inventor: James Jen-Ho Wang
- Applicant: James Jen-Ho Wang
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L21/16
Abstract:
An annular trench region is formed at a semiconductor substrate of an electronic device that defines a conductive plug of the through-wafer via, wherein the conductive plug includes an undisturbed portion of the semiconductor substrate.
Public/Granted literature
- US20090065904A1 SUBSTRATE HAVING THROUGH-WAFER VIAS AND METHOD OF FORMING Public/Granted day:2009-03-12
Information query
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