Invention Grant
US07705357B2 Thin film transistor with channel region in recess 失效
薄膜晶体管,沟道区域在凹槽中

Thin film transistor with channel region in recess
Abstract:
A semiconductor element with high current drive capability, capable of high-speed operation, and having little variation in pluralities of semiconductor elements is provided. It is characterized by the fact that semiconductor elements have a first crystalline semiconductor region including pluralities of crystal orientations, and the first crystalline semiconductor region being connected to a second crystalline semiconductor region which is conductive, wherein the first crystalline semiconductor region is extended in the direction parallel to the insulating film which extends in linear-shaped stripe pattern on the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in linear-shaped stripe pattern.
Public/Granted literature
Information query
Patent Agency Ranking
0/0