Invention Grant
- Patent Title: Thin film transistor with channel region in recess
- Patent Title (中): 薄膜晶体管,沟道区域在凹槽中
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Application No.: US10377725Application Date: 2003-03-04
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Publication No.: US07705357B2Publication Date: 2010-04-27
- Inventor: Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa
- Applicant: Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2002-059418 20020305; JP2002-118322 20020419
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/036 ; H01L31/112

Abstract:
A semiconductor element with high current drive capability, capable of high-speed operation, and having little variation in pluralities of semiconductor elements is provided. It is characterized by the fact that semiconductor elements have a first crystalline semiconductor region including pluralities of crystal orientations, and the first crystalline semiconductor region being connected to a second crystalline semiconductor region which is conductive, wherein the first crystalline semiconductor region is extended in the direction parallel to the insulating film which extends in linear-shaped stripe pattern on the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in linear-shaped stripe pattern.
Public/Granted literature
- US20040026696A1 Semiconductor element and semiconductor device using the same Public/Granted day:2004-02-12
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