Invention Grant
US07705332B2 Nanometer-scale lithography using extreme ultraviolet/soft x-ray laser interferometry
有权
使用极紫外/软X射线激光干涉测量的纳米级光刻技术
- Patent Title: Nanometer-scale lithography using extreme ultraviolet/soft x-ray laser interferometry
- Patent Title (中): 使用极紫外/软X射线激光干涉测量的纳米级光刻技术
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Application No.: US11840890Application Date: 2007-08-17
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Publication No.: US07705332B2Publication Date: 2010-04-27
- Inventor: Mario C. Marconi , Przemyslaw W. Wachulak , Carmen S. Menoni , Jorge J. Rocca
- Applicant: Mario C. Marconi , Przemyslaw W. Wachulak , Carmen S. Menoni , Jorge J. Rocca
- Applicant Address: US CO Fort Collins
- Assignee: Colorado State University Research Foundation
- Current Assignee: Colorado State University Research Foundation
- Current Assignee Address: US CO Fort Collins
- Agency: Cochran Freund & Young LLC
- Agent Samuel M. Freund
- Main IPC: G03H1/20
- IPC: G03H1/20
Abstract:
Direct patterning of nanometer scale features by interferometric lithography using a 46.9 nm laser is described. Multiple exposures using a Lloyd's mirror interferometer permitted printing of arrays having 60 nm FWHM features.
Public/Granted literature
- US20080175348A1 NANOMETER-SCALE LITHOGRAPHY USING EXTREME ULTRAVIOLET/SOFT X-RAY LASER INTERFEROMETRY Public/Granted day:2008-07-24
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