Invention Grant
- Patent Title: Charged-particle beam writing method
- Patent Title (中): 带电粒子束写入方法
-
Application No.: US12170874Application Date: 2008-07-10
-
Publication No.: US07705322B2Publication Date: 2010-04-27
- Inventor: Rieko Nishimura , Takashi Kamikubo
- Applicant: Rieko Nishimura , Takashi Kamikubo
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-183037 20070712; JP2008-151552 20080610
- Main IPC: H01J37/302
- IPC: H01J37/302

Abstract:
The present invention provides an electron beam writing method capable of suppressing a variation in position to be irradiated with an electron beam due to its drift and writing a predetermined pattern.A positional displacement amount near the center of each main deflection area of the charged-particle beam is determined. Correction values are determined from a plurality of the positional displacement amounts. A position irradiated with the charged-particle beam is corrected from the correction values. The neighborhood of the center of the main deflection area can be a sub deflection area including the center of the main deflection area. In this case, the positional displacement amount can be one for one arbitrary point in the sub deflection area. Alternatively, the positional displacement amount can also be the average of positional displacement amounts at a plurality of arbitrary points in the sub deflection area.
Public/Granted literature
- US20090014663A1 CHARGED-PARTICLE BEAM WRITING METHOD Public/Granted day:2009-01-15
Information query