Invention Grant
US07705322B2 Charged-particle beam writing method 有权
带电粒子束写入方法

Charged-particle beam writing method
Abstract:
The present invention provides an electron beam writing method capable of suppressing a variation in position to be irradiated with an electron beam due to its drift and writing a predetermined pattern.A positional displacement amount near the center of each main deflection area of the charged-particle beam is determined. Correction values are determined from a plurality of the positional displacement amounts. A position irradiated with the charged-particle beam is corrected from the correction values. The neighborhood of the center of the main deflection area can be a sub deflection area including the center of the main deflection area. In this case, the positional displacement amount can be one for one arbitrary point in the sub deflection area. Alternatively, the positional displacement amount can also be the average of positional displacement amounts at a plurality of arbitrary points in the sub deflection area.
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